Process of fabricating integrated heterojunction bipolar device

Details Process of fabricating integrated heterojunction bipolar device Process of fabricating integrated heterojunction bipolar device

1997-08-12

1999-01-12

Brown, Peter Toby

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438329, 438393, 438396, 257572, 257577, H01L 21331

Patent

active

058588507

ABSTRACT:
A process of fabricating a semiconductor device includes the steps of: forming a base layer of a bipolar transistor (NPN bipolar transistor) on a semiconductor base body by selective epitaxial growth; and forming a dielectric film of a MIS capacitor on the same semiconductor base body. In this process, when side walls for isolating a base electrode connected to the base layer from an emitter layer formed on the base layer are formed, the dielectric film is formed of a silicon nitride film which is the same as one of films constituting the side walls. Thus, a MIS capacitor can be thus formed on one substrate together with a bipolar transistor only by adding the minimum number of steps to the steps of forming the bipolar transistor.

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patent: 5622887 (1997-04-01), Miwa et al.
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