Process of fabricating a semiconductor insulated circuit device

Details Process of fabricating a semiconductor insulated circuit device Process of fabricating a semiconductor insulated circuit device

1986-10-30

1988-11-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 56, 437200, 437240, H01L 21441, H01L 21473

Patent

active

047820373

ABSTRACT:
Herein disclosed is a process of fabricating a semiconductor integrated circuit device, in which there is formed between a conductive layer prepared by covering a polycrystalline silicon layer with either a layer containing a refractory metal of high melting point, i.e., a refractory metal layer or a silicide layer of the refractory metal and a first insulating film made of phosphosilicate glass flowing over said conductive layer containing the refractory metal, a second insulating film preventing the layer containing a refractory metal from peeling from the polycrystalline silicon layer by the glass flow. The second insulating film is formed by deposition to have a thickness not smaller than a predetermined value.

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Woo, D. S. et al., "Silicon Nitride Isolation of Phosphosilicate Glass Layer", in RCA Technical Notes, TN No. 1234, 11-1979.

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