Process of fabricating a semiconductor device having nitrogen-co

Details Process of fabricating a semiconductor device having nitrogen-co Process of fabricating a semiconductor device having nitrogen-co

1997-04-03

2000-04-11

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438687, 438785, 438791, 438766, 438626, 438627, 438632, 438635, H01C 2144

Patent

active

06048795&

ABSTRACT:
A field effect transistor available for 1 giga-bit dynamic random access memory device has a two-layer gate structure consisting of a lower layer of nitrogen-containing silicon and an upper layer of refractory metal, and the nitrogen-containing silicon effectively prevents the gate oxide layer from alkaline metals diffused from the refractory metal.

REFERENCES:
patent: 4080718 (1978-03-01), Richman
patent: 5521527 (1996-05-01), Sakata et al.
patent: 5610099 (1997-03-01), Stevens et al.
patent: 5672523 (1997-09-01), Yamamoto et al.
patent: 5804846 (1998-09-01), Fuller
"Novel Nice structure for high reliability and high Performance 0.25 ym dual gate CNOV."; Kevoi et al IEDM 1993. PP13.2.1-13.2.4.
Extended Abstracts No. 2 (The 41st Spring Meeting, 1994); The Japan Society of Applied Physics and Related Societies, Mar. 28-31, 1994.

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