Process of exactly patterning layer to target configuration by u

Details Process of exactly patterning layer to target configuration by u Process of exactly patterning layer to target configuration by u

1995-12-13

1998-06-09

Chapman, Mark

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Including heating

430 5, 430313, G03C 500

Patent

active

057631433

ABSTRACT:
Tension takes place in a surface of a photo-resist mask due to a shrinkage in a post-development bake, and a recess formed in the photo-resist mask takes up the tension so as to maintain the adhesion to a semiconductor substrate and prevent a resist pattern from undesirable deformation.

REFERENCES:
patent: 5032890 (1991-07-01), Ushiku et al.
patent: 5459093 (1995-10-01), Kuroda et al.

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