Process of etching silicon nitride layer by using etching gas co

Details Process of etching silicon nitride layer by using etching gas co Process of etching silicon nitride layer by using etching gas co

1996-05-21

1997-12-09

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 15665911, 216 67, 252 791, H01L 2100

Patent

active

056956029

ABSTRACT:
A silicon nitride layer on a silicon oxide layer is selectively etched by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen, and the hydrogen bromide is large enough in vapor pressure to maintain the composition of the etching gas without a heater.

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