Etching a substrate: processes – Nongaseous phase etching of substrate – Relative movement between the substrate and a confined pool...
Reexamination Certificate
2006-11-28
2008-09-16
Tran, Binh X (Department: 1792)
Etching a substrate: processes
Nongaseous phase etching of substrate
Relative movement between the substrate and a confined pool...
C216S100000, C216S108000, C438S754000
Reexamination Certificate
active
07425278
ABSTRACT:
An etchant which includes an aqueous solution of between about 30% and about 38% concentrated hydrogen peroxide, said percentages being by volume, based on the total volume of the solution; between about 3.5 ml and about 20 ml per liter of phosphoric acid; and an amount of potassium hydroxide to adjust the pH of the solution to between about 7.8 and about 9.1. The etchant is useful in removing a layer of an alloy of titanium and tungsten or a layer of tungsten from a precision surface.
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Jain Anurag
Semkow Krystyna Waleria
Srivastava Kamalesh K.
Goodwin, Esq. Kerry B.
Tran Binh X
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