Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-19
2005-04-19
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S059000, C438S509000, C438S796000
Reexamination Certificate
active
06881658
ABSTRACT:
A process of heat-treating II-VI compound semiconductors reduces the electrical resistivity without the decrease in crystallinity resulting from the increase in dislocation density. The process comprises the following steps:(a) placing at least one II-VI compound semiconductor in contact with aluminum in a heat-treating chamber having the inside surface formed by at least one material selected from the group consisting of pyrolytic born nitride, hexagonal-system boron nitride, sapphire, alumina, aluminum nitride, and polycrystalline diamond; and (b) heat-treating the II-VI compound semiconductor or semiconductors in a gaseous atmosphere containing the group II element constituting part of the II-VI compound semiconductor or semiconductors. A II-VI compound semiconductor is heat-treated by the foregoing process. An apparatus for heat-treating II-VI compound semiconductors comprises components for performing the foregoing process.
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The electrical properties of zinc selenide by G. John and J. Woods, J. Phys. D: Appl. Phys., vol. 9, 1976, pp 799-810 (Prior Art cited in the Specification).
Fish & Richardson P.C.
Lebentritt Michael
Sumitomo Electric Industries Ltd.
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