Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-12-12
2006-12-12
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S117000, C365S145000, C365S194000
Reexamination Certificate
active
07149137
ABSTRACT:
The present invention facilitates evaluation of ferroelectric memory devices. A ferroelectric memory device is fabricated that comprises memory cells comprising ferroelectric capacitors (802). A short delay polarization value is obtained (804) by writing a data value, performing a short delay, and reading the data value. A long delay polarization value is obtained (806) by again writing the data value, performing a long delay, and again reading the data value. The short delay and long delay polarization values are compared (808) to obtain a data retention lifetime for the ferroelectric memory device. The obtained data retention lifetime is compared with acceptable values (810) and, if deemed unacceptable, avoids unnecessary performance of thermal bake data retention lifetime testing.
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Bailey Richard Allen
Rodriguez John Anthony
Brady III W. James
Elms Richard
Garner Jacqueline J.
Sofocleous Alexander
Telecky , Jr. Frederick J.
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