Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-18
1998-04-21
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257384, 257622, 257755, H01L 2908, H01L 2940, H01L 2711
Patent
active
057420882
ABSTRACT:
A new method of forming improved buried contact junctions is described. A layer of polysilicon overlying gate silicon oxide is provided over the surface of a semiconductor substrate and etched away to provide an opening to the substrate where a planned buried contact junction will be formed. A second doped polysilicon layer and a tungsten silicide layer are deposited and patterned to provide gate electrodes and a contact overlying the planned buried contact junction and providing an opening to the substrate where a planned source/drain region will be formed adjoining the planned buried contact junction and wherein a portion of the polysilicon layer not at the polysilicon contact remains as residue. The residue is etched away whereby a trench is etched into the substrate at the junction of the planned source/drain region and the planned buried contact junction. A doped glasseous layer is deposited overlying the patterned tungsten silicide/polysilicon layer and within the trench, then isotropically etched away until it remains only partially filling the trench. The substrate is oxidized to drive-in dopant from the doped glasseous layer within the trench into the surrounding substrate. Ions are implanted to form the planned source/drain region. Dopant is outdiffused from the second polysilicon layer to form the planned buried contact junction wherein the dopant surrounding the trench provides a conduction channel between the source/drain region and the adjoining buried contact junction.
REFERENCES:
patent: 4975875 (1990-12-01), Ito
patent: 5298782 (1994-03-01), Sundaresan
patent: 5336916 (1994-08-01), Chan et al.
Chan Lap
Pan Yang
Sundaresan Ravi
Ackerman Stephen B.
Chartered Semiconductor Manufacturing Pte Ltd.
Munson Gene M.
Pike Rosemary L. S.
Saile George O.
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