Process gas inlet and distribution passages

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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1566431, 216 71, B44C 122

Patent

active

055974392

ABSTRACT:
An easy to modify, remove, clean, and replace gas distribution ring for a highly corrosive plasma etch substrate processing chamber is disclosed. Gas is provided to a gap between adjacent pieces in sealing a ceramic dome of the processing chamber to a lower wall section of processing chamber. The gap acts as a manifold type channel around the periphery of the processing chamber. The channel opening is obstructed by the gas distribution ring. The gas distribution ring includes a series of slots in its surface which control the gas flow pattern into the processing chamber. The gas flow pattern can be easily adjusted merely by changing one gas distribution ring to another gas distribution ring with the desired slot configuration. The gas flow passages can easily be cleaned by removing the process chamber dome which exposes the gas flow passages in the gas distribution ring.

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patent: 4342901 (1982-08-01), Zajac
patent: 4590042 (1986-05-01), Drage
patent: 4614639 (1986-09-01), Hegedus et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5468298 (1995-11-01), Lei et al.

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