Process for wet etching of semiconductor wafers

Details Process for wet etching of semiconductor wafers Process for wet etching of semiconductor wafers

1999-02-11

2000-12-19

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438747, 438748, 438750, 438756, H01L 21302

Patent

active

061627399

ABSTRACT:
A process of controlled wet etching of semiconductor wafers having a silicon dioxide layer on each of two surfaces, includes entirely removing the silicon dioxide layer from a top side and selectively removing the silicon dioxide layer from the opposite side bottom in a defined area which extends to the inside from the peripheral edge of the semiconductor wafer using an etching medium which includes hydrofluoric acid or a combination of hydrofluoric acid and ammonium fluoride and at least one carboxylic acid.

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D.J. Monk et al., "Hydrofluoric Acid Etching or Silicon Dioxide Sacrificial Layers", pp. 264-269, J. Electrochem. Soc., vol. 141, No. 1, Jan. 1994.
E. Gaulhofer, "Spin Etcher for Removal of Backside Depositions", pp. 57-58 nd 219, Solid State Technology, May 1991.

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