Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-06-04
1978-03-07
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29572, 136 89SG, 357 30, 357 59, 427 86, 427113, 427248J, 427249, H01L 2120, H01L 21324, H01L 2184
Patent
active
040778185
ABSTRACT:
Low-cost polycrystalline silicon solar cells supported on substrates are prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical-grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices are formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon is substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.
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Chu et al., "Deposition and Properties of Silicon on Graphite Substrates" J. Electrochem. Soc., vol. 123, No. 1, Jan. 1976, pp. 106-110.
Manning John R.
Marchant Robert D.
Rutledge L. Dewayne
Saba W. G.
Sandler Ronald F.
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