Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2008-01-29
2008-01-29
Lee, Sin (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S325000, C430S313000, C430S317000, C430S316000, C430S318000, C430S314000, C430S005000
Reexamination Certificate
active
10702238
ABSTRACT:
A process and related structure are disclosed for using photo-definable layers that may be selectively converted to insulative materials in the manufacture of semiconductor devices, including for example dynamic random access memories (DRAMs), synchronous DRAMs (SDRAMs), static RAMs (SRAMs), FLASH memories, and other memory devices. One possible photo-definable material for use with the present invention is plasma polymerized methylsilane (PPMS), which may be selectively converted into photo-oxidized siloxane (PPMSO) through exposure to deep ultra-violet (DUV) radiation using standard photolithography techniques. According to the present invention, structures may be formed by converting exposed portions of a photo-definable layer to an insulative material and by using the non-exposed portions in a negative pattern scheme, or the exposed portions in a positive pattern scheme, to transfer a pattern into to an underlying layer. The remaining portions of the photo-definable layer may also be left as an insulator layer within the completed semiconductor device. Representative examples of structures which may be formed according to the present invention include, but are not limited to, dielectric layers, trenches for contacts, self-aligned contacts, conductors, insulators, capacitors, gates, source/drain junctions, and the like.
REFERENCES:
patent: 4921321 (1990-05-01), Weidman
patent: 4978594 (1990-12-01), Bruce et al.
patent: 5215861 (1993-06-01), Augustino et al.
patent: 5439780 (1995-08-01), Joshi et al.
patent: 5885751 (1999-03-01), Weidman et al.
patent: 6127263 (2000-10-01), Parikh
patent: 6204168 (2001-03-01), Naik et al.
patent: 6515355 (2003-02-01), Jiang et al.
patent: 2 294 124 (1996-04-01), None
Ajey M. Joshi et al., “Plasma Deposited Organosilicon Hydridge Network Polymers as Versatile Resists for Entirely Dry Mid-Deep UV Photolithography,”SPIE, vol. 1925, pp. 709-720, Jan. 1993.
O. Joubert et al., “Plasma polymerized—dry resist process for 0.25 μm photolithography,”J. Vac. Sci. Technol. B 12(6), pp. 3909-3913, Nov./Dec. 1994.
O. Joubert et al., “Plasma Polymerized Organosilane Network Polymers; High Performance Resists for Positive and Negative Tone Deep UV Lithography,”SPIE, vol. 2195, pp. 358-371, May 1994.
T. W. Weidman et al., Applications of Plasma Polymerized Methylsilane as a Resist and Silicon Dioxide Precursor for 193 and 248 nm Lithography,SPIE, vol. 2438, pp. 496-512, Jun. 1995.
Timothy W. Weidman and Ajey M. Joshi, “New photodefinable glass etch masks for entirely dry photolithography: Plasma deposited organosilicon hydride polymers,”Appl. Phys. Lett. 62(4), pp. 372-374, Jan. 25, 1993.
Lee Sin
Micro)n Technology, Inc.
O'Keefe, Egan Peterman & Enders LLP
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