Process for uniform deposition of tungsten silicide on semicondu

Details Process for uniform deposition of tungsten silicide on semicondu Process for uniform deposition of tungsten silicide on semicondu

1995-08-10

1996-04-23

Quach, T. N.

Fishing, trapping, and vermin destroying

437245, 148DIG6, 148DIG147, 4272552, H01L 21283, C23C 1642

Patent

active

055102972

ABSTRACT:
Disclosed is a process for the formation of a tungsten silicide layer on an integrated circuit structure of a semiconductor wafer mounted on a susceptor in a vacuum chamber, wherein the tungsten silicide layer is applied at a temperature of at least 500.degree. C. and the susceptor has an aluminum nitride surface. After the chamber has been cleaned with one or more fluorine-containing etchant gases, the improvement comprises depositing a layer of tungsten silicide on the surface of the susceptor prior to an initial deposition of tungsten silicide on a wafer mounted on the susceptor after cleaning with the fluorine-containing etchant gases.

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