Process for ultra-thin body SOI devices that incorporate EPI...

Details Process for ultra-thin body SOI devices that incorporate EPI... Process for ultra-thin body SOI devices that incorporate EPI...

2005-08-15

2008-09-09

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S214000, C438S154000

Reexamination Certificate

active

07422971

ABSTRACT:
The invention relates to a transistor that includes an ultra-thin body epitaxial layer that forms an embedded junction with a channel that has a length dictated by an undercut under the gate stack for the transistor. The invention also relates to a process of forming the transistor and to a system that incorporates the transistor.

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