Semiconductor device manufacturing: process – Silicon carbide semiconductor
Reexamination Certificate
2006-03-07
2006-03-07
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Silicon carbide semiconductor
C438S974000, C438S475000
Reexamination Certificate
active
07008886
ABSTRACT:
A process treats a surface of a semiconductor material in order to put the surface into a predetermined electrical state. The semiconductor material is preferably monocrystalline. The process includes (a) preparing the surface of the semiconductor material such that the surface has a controlled organization at an atomic scale such that the surface is capable of combining with a chosen material, and (b) combining the surface thus prepared with a material chosen from among hydrogen, molecules containing hydrogen, metals, organic molecules and inorganic molecules, wherein the preparing and the combining the surface with the material cooperate to obtain the predetermined electrical state of the surface.
REFERENCES:
patent: 5363800 (1994-11-01), Larkin et al.
patent: 5420443 (1995-05-01), Dreifus et al.
patent: 6274234 (2001-08-01), Dujardin et al.
patent: 6667102 (2003-12-01), Amy et al.
patent: 2757183 (1996-12-01), None
patent: 2786794 (1998-12-01), None
patent: 2801723 (1999-11-01), None
patent: 9181355 (1997-07-01), None
F. Semond et al., “Atomic Structure of the β-SiC(100)-(3×2)Surface”, The American Physical Society, vol. 77, No. 10, Sep. 2, 1996, pp. 2013-2016.
T.C. Shen et al., “Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanism”, Science, vol. 268, Jun. 16, 1995, pp. 1590-1592.
F. Maier et al., “Origin of Surface Conductively in Diamond”, The American Physical Society, vol. 85, No. 16, Oct. 16, 2000, pp. 3472-3475.
Taro Hitosugi et al., “Scanning Tunneling Microscopy/Spectroscopy Of Dangling-Bong Wires Fabricated On The Si(100)-2×1-H Surface”, Elsevier Science, 1998, pp. 340-345.
P. Doumergue et al., “Conductance Of A Finite Missing Hydrogen Atomic Line On Si(100)-(2×1)-H”, The American Physical Society, vol. 59, No. 24, Jun. 15, 1999, pp. 15910-15916.
K. Oura et al., “Hydrogen Interaction With Clean And Modified Silicon Surfaces”, Elsevier Science, pp. 48-51.
P. Kratzer et al., “Site-Specific H2Adsorption on Vicinal Si(001)Surfaces”, The American Physical Society, Dec. 21, 1998, pp. 5596-5599.
P. Soukiassian et al., “Direct Observation of a β-SiC(100)-c)(4×2)Surface Reconstruction”, The American Physical Society, vol. 78, No. 5, Feb. 3, 1997, pp. 907-910.
International Search Report, PCT/FR 02/01323, International filing date Apr. 17, 2002, date Search Report mailed- Sep. 2, 2002.
Derycke Vincent
Soukiassan Patrick
Commissariat a l''Energie Atomique
Nhu David
Thelen Reid & Priest LLP
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