Process for treating semiconductor substrates

Details Process for treating semiconductor substrates Process for treating semiconductor substrates

1991-05-21

1995-10-03

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566511, 1566621, 252 793, 134 1, 134 3, H01L 2100

Patent

active

054549019

ABSTRACT:
Semiconductor substrates are treated in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and a purified water or in a treating solution consisting of hydrofluoric acid, ammonium fluoride, hydrogen peroxide and a purified water, wherein the treating solution preferably has a hydrofluoric acid concentration of 0.1 to 10 wt % and a hydrogen peroxide concentration of 0.1 to 15 wt %. A process for treating semiconductor substrates is provided according to this invention, which allows less inclusion of metallic impurities from the treating solution and has excellent ability of removing metallic impurities with a very small amount of microparticles deposited on the substrate. The number of microparticles deposited on the semiconductor substrates can be reduced to about 1/10 the level in the conventional process.

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patent: 5078832 (1992-01-01), Tanaka
Kern et al., "Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology", RCA Review, Jun. 1970, pp. 187-207.

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