Process for treating exposed surfaces of a low dielectric consta

Details Process for treating exposed surfaces of a low dielectric consta Process for treating exposed surfaces of a low dielectric consta

1999-07-27

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438623, 438637, 438639, 438675, 438676, H01L 21302

Patent

active

06114259&

ABSTRACT:
A method for treating exposed surfaces of a low k carbon doped silicon oxide dielectric material in order to protect the low k carbon doped silicon oxide dielectric material from damage during removal of photoresist mask materials is described. The process comprises (a) first treating the exposed surfaces of a low k carbon doped silicon oxide dielectric material with a plasma capable of forming a densified layer on and adjacent the exposed surfaces of low k carbon doped silicon oxide dielectric material and (b) then treating the semiconductor wafer with a mild oxidizing agent capable of removing photoresist materials from the semiconductor wafer. These steps will prevent the degradation of the exposed surfaces of a low k carbon doped silicon oxide dielectric material during removal of an etch mask after formation of vias or contact openings in the low k carbon doped silicon oxide dielectric material.

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