Process for treating damaged surfaces of low dielectric constant

Details Process for treating damaged surfaces of low dielectric constant Process for treating damaged surfaces of low dielectric constant

1999-03-29

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438471, 438475, 438787, 438790, 257607, 257629, H01L 21469

Patent

active

060280158

ABSTRACT:
A process is described for treating damaged surfaces of a low dielectric constant organo silicon oxide insulation layer of an integrated circuit structure to inhibit absorption of moisture which comprises treating such damaged surfaces of said organo silicon oxide insulation layer with a hydrogen plasma. The treatment with hydrogen plasma causes hydrogen to bond to silicon atoms with dangling bonds in the damaged surface of the organo silicon oxide layer to replace organic material severed from such silicon atoms at the damaged surface, whereby absorption of moisture in the damaged surface of the organo silicon oxide layer, by bonding of such silicon dangling bonds with moisture, is inhibited.

REFERENCES:
patent: 4331486 (1982-05-01), Chenevas-Paule
patent: 5250444 (1993-10-01), Khan et al.
patent: 5660682 (1997-08-01), Zhao et al.
patent: 5744202 (1998-04-01), Nickel
patent: 5888856 (1999-03-01), Hamada
patent: 5946585 (1999-08-01), Zhang et al.
McClatchie, S., et al., "Low Dielectric Constant Oxide Films Deposited Using CVD Techniques", 1998 Proceedings Fourth International DUMIC Conference, Feb. 16-17, 1998, pp. 311-318.
Peters, Laura, "Pursuing the Perfect Low-k Dielectric", Semiconductor International, Sep., 1998, vol. 21, No. 10, pp. 64-66, 68, 70, 72, and 74.

Affiliated with

Also associated with

Rating

Process for treating damaged surfaces of low dielectric constant does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for treating damaged surfaces of low dielectric constant, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for treating damaged surfaces of low dielectric constant will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-520312