Process for transferring microminiature patterns using spin-on g

Details Process for transferring microminiature patterns using spin-on g Process for transferring microminiature patterns using spin-on g

1995-04-19

1998-04-28

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 216 87, 216 51, 430296, 430325, 430326, G03F 700

Patent

active

057439982

ABSTRACT:
A process is provided for altering the susceptibility of a portion of a Spin-On Glass layer to etching. The process includes taking a substrate including a layer of positive or negative resist Spin-On Glass and exposing a portion of the Spin-On Glass layer to an electric field or an electron beam. Depending on the particular Spin-On Glass used, exposure of a portion of the Spin-On Glass layer to the electric field or electron beam causes the exposed portion to have either significantly enhanced or reduced susceptibility to etching as compared to the unexposed portion. This enables the exposed and unexposed portions to be differentiated by selectively removing the more etch susceptible portions of the Spin-On Glass layer during development.

REFERENCES:
patent: 3935332 (1976-01-01), Poliniak et al.
patent: 5003062 (1991-03-01), Yen
patent: 5328807 (1994-07-01), Tanaka et al.
patent: 5362591 (1994-11-01), Imai et al.
Tadashi Nakano, Kyoji Tokunaga, and Tomohiro Ohta,; "Relationship between Chemical Structure and Film Properties of Organic SOG"; LSI Research Laboratories; pp. 11-12.
Victor Comello; "Planarizing Leading Edge Devices"; Semiconductor International, Nov. 1990; pp. 60-66.
C.R.K. Marrian, F.K. Perkins, S.L. Brandow, T.S. Koloski, E.A. Dobisz, and J.M. Calvert; "Low Voltage Electron Beam Lithography in Self-assembled Ultrathin Films with the Scanning Tunneling Microscope"; Applied Physics Letter, Jan. 1994; pp. 390-392.
Christie R.K. Marrian and Elizabeth A. Dobisz; "Electron-beam Lithography with the Scanning Tunneling Microscope"; J. Vac. Sci. Technology B. Nov./Dec. 1992; pp. 2877-2891.
C.R.K. Marrian and E.A. Dobisz; "Investigations of Underdeveloped E-beam Resist with a Scanning Tunneling Microscope"; J. Vac. Sci. Technol. B., Mar./Apr. 1991; pp. 1367-1370.
H. Zhang, L.S. Hordon, S.W.J. Kuan, P. Maccagno, and R.F.W. Pease; "Exposure of Ultrathin Polymer Resists With the Scanning Tunneling Microscope"; J. Vac. Sci. Technol. B7, Nov./Dec. 89; pp. 1717-1722.
J.W. Lyding, T-C. Shen, J.S. Hubacek, J.R. Tucker, and G.C.Abeln; "Nanoscale Patterning and Oxidation of H-passivated Si(100)-2X1 Surfaces with an Ultrahigh Vacuum Scanning Tunneling Microscope"; Appl. Phys. Lett 65 (15), Apr. 1994; pp. 2010-2012.
E.S. Snow and P.M. Campbell; "Fabrication of Si Nanostructures with an Atomic Force Microscope"; Appl. Phys. Lett 64 (15), Apr. 1994; pp. 1932-1934.
Dawen Wang, Liming Tsau, and K.L. Wang; "Nanometer-structure Writing on Si(100) Surfaces Using a Non-contact-mode Atomic Force Microscope"; Appl. Phys. Lett. 65 (11); Sep. 1994; pp. 1415-1417.
S.C. Minne, H.T. Soh, PH. Flueckiger, and C.F. Quate; "Fabrication of 0.1 .mu.m Metal Oxide Semiconductor Field-effect Transistors with the Atomic Force Microscope"; Appl. Phys. Lett. 66 (6), Feb. 1995; pp. 703-705.
G.C. Rosolen, A.C.F. Hoole, M.E. Welland, and A.N. Broers; "Integrated Nanofabrication with the Scanning Electron Microscope and Scanning Tunneling Microscope"; App. Phys. Lett. 63 (17) Oct. 1993; pp. 2435-2437.
M.A. McCord and R.F.W. Pease; "Exposure of Calcium Floride Resist with the Scanning Tunneling Microscope"; J. Vac. Sci. Technol. B 5 (1), Jan./Feb. 87; pp. 430-433.
M. Enachescu, E. Hartmann, and F. Koch; "Writing Electronic Nanometer Structures Into Porous Si Films by Scanning Tunneling Microscope"; Appl. Phys. Lett 64 (17), Apr. 1994; pp. 2253-2255.
F. Thibaudau, J. R. Roche, and F. Salvan; "Nanometer-scale Lithography on Si surface by Decomposition of Ferrocene Molecules Using a Scanning Tunneling Microscope"; Appl. Phys. Lett. 64 (4), Jan. 1994; pp. 523-525.
E.E.Ehrichs, S. Yoon and A.L. De Lozanne; "Direct Writing of 10 nm. Features with the Scanning Tunneling Microscope"; Appl. Phys. Lett. 53 (23) Dec. 1988; pp. 2287-2289.
D. Liu, R.B. Marcus; "Characterization of Silicon Field Emission Microtriodes"; pp. 672-675.
S.C. Minne, PH. Flueckiger, H.T. Soh, and C.F.Quate; "Parallel Imaging and Parallel Lithography with an Atomic Force Microscope"; Avs. Proc. of Nano3, 1994; pp.1-22.

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