Process for through silicon via filling

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S638000, C438S687000, C438S633000, C257SE21586

Reexamination Certificate

active

08043967

ABSTRACT:
A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

REFERENCES:
patent: 6113771 (2000-09-01), Landau et al.
patent: 6261433 (2001-07-01), Landau
patent: 6350366 (2002-02-01), Landau et al.
patent: 7670950 (2010-03-01), Richardson et al.
patent: 7776741 (2010-08-01), Reid et al.
patent: 2003/0079683 (2003-05-01), Nakano et al.
patent: 2003/0106802 (2003-06-01), Hagiwara et al.
patent: 2003/0186540 (2003-10-01), Ito et al.
patent: 2010/0041226 (2010-02-01), Reid et al.
patent: 2011/0083965 (2011-04-01), Reid et al.
patent: 09-223858 (1997-08-01), None
patent: 2003-113479 (2003-04-01), None
patent: 10-1999-0015599 (1999-03-01), None
patent: 10-2002-0077811 (2002-10-01), None
Reid et al, “Electrolyte Concentration Control System for High Rate Electroplating”, U.S. Appl. No. 12/577,619, filed Oct. 12, 2009.
U.S. Notice of Allowance and Allowed Claims for U.S. Appl. No. 12/193,644, mailed Jan. 28, 2010.
International Search Report and Written Opinion for PCT/US2009/054094, mailed Mar. 11, 2010.
U.S. Appl. No. 12/193,644, Notice of Allowance mailed May 3, 2010.

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