Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-04-16
2011-10-25
Estrada, Michelle (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S687000, C438S633000, C257SE21586
Reexamination Certificate
active
08043967
ABSTRACT:
A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.
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Reid Jonathan D.
Wang Katie Qun
Wiley Mark J.
Estrada Michelle
Novellus Systems Inc.
Weaver Austin Villeneuve & Sampson LLP
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