Process for thinning silicon with special application to produci

Details Process for thinning silicon with special application to produci Process for thinning silicon with special application to produci

1976-01-14

1977-09-27

Van Horn, Charles E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29580, 156657, 156662, 252 793, 427 86, 427 93, H01L 21306

Patent

active

040509796

ABSTRACT:
This disclosure relates to methods of producing thin layers of silicon as well as thin layers of silicon on insulating substrates such as silicon dioxide or polycrystalline silicon by forming either an n- layer of single crystal silicon over a p++ layer of single crystal silicon or a p- layer of single crystal silicon over an n++ layer of single crystal silicon and then removing either the n++ or p++ single crystal substrate, as the case may be, by utilizing an etch which will only etch the n++ or p++ region and will stop when the n- or p- region, as the case may be, has been reached.

REFERENCES:
patent: 3096262 (1963-07-01), Shockley
patent: 3390022 (1968-06-01), Fa
patent: 3486892 (1969-12-01), Rosvold
patent: 3721588 (1973-03-01), Hays
patent: 3767494 (1973-10-01), Muraoka et al.

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