Process for the wet chemical treatment of semiconductor wafers

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S750000, C438S751000, C438S752000, C438S753000, C438S734000, C438S749000, C438S703000, C134S003000, C134S025400

Reexamination Certificate

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09425694

ABSTRACT:
A process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, has the semiconductor wafers firstly treated with an aqueous HF solution, then treated with an aqueous O3solution and finally treated with water or an aqueous HCl solution, these treatments forming a treatment sequence.

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patent: 0701275 (1996-03-01), None
patent: 0701275 (1996-03-01), None
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patent: 0731498 (1996-09-01), None
patent: 0731498 (1996-09-01), None
patent: 0844650 (1998-05-01), None
patent: 0859404 (1998-08-01), None
Abstract for JP 4-26 120 A.
Abstract [1983:45 13 999] for Proceedings of the second Int. Symp. on Cleaning Techn. in Semiconductor Device Manufacturing, Electrochem. Soc., 1992 pp. 18-25.
M. Meuris et al., Solid State Technologie, Jul. 95, p. 109.
Patent Abstracts of Japan, vol. 1996, No. 06, Jun. 28, 1996 & JP 08031837A (Mitsubishi Materials Shilicon Corp; Others: 01), Feb. 2, 1996.
Meuris M et al: “The IMEC Clean: A New Concept For Particle And Metal Removed On Si Surfaces”, Solid State Technology, US, Cowan Publ. Corp. Washington vol. 38, No. 7, 1995, p. 109-110, 112, 114 XP 000523398, ISSN: 0038-111X, p. 110, L.5-44.
The English Derwent Abstract 1996-404246[41] corresp. to EP 0731495A2 is enclosed.

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