Process for the singulation of integrated devices in thin...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S460000

Reexamination Certificate

active

07605015

ABSTRACT:
A process for the fabrication of an integrated device in a semiconductor chip envisages: forming a semiconductor layer partially suspended above a semiconductor substrate and constrained to the substrate by temporary anchorages; dividing the layer into a plurality of portions laterally separated from one another; and removing the temporary anchorages, in order to free the portions.

REFERENCES:
patent: 5466630 (1995-11-01), Lur
patent: 6693039 (2004-02-01), Erratico et al.
patent: 2003/0168711 (2003-09-01), Villa et al.
patent: 1043770 (2000-10-01), None
patent: 1324382 (2003-07-01), None
T. Overstolz et al., “A Clean Wafer-Scale Chip-Release Process Without Dicing Based on Vapor Phase Etching,” 17th IEEE International Conference on Micro Electro Mechanical Systems, Jan. 2004, pp. 717-720.
T. Sato et al., “A New Substrate Engineering for the Formation of Empty Space in Silicon (ESS) Induced by Silicon Surface Migration,” IEDM 1999, pp. 517-520.

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