Process for the self-alignment of a double polycrystalline silic

Details Process for the self-alignment of a double polycrystalline silic Process for the self-alignment of a double polycrystalline silic

1984-03-26

1984-12-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29580, 148187, 156653, 156657, 1566591, 156662, 357 23, 357 59, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044889313

ABSTRACT:
On a substrate of monocrystalline silicon there are formed, one after another, a first oxide layer, a first polycrystalline silicon layer, a second intermediate oxide layer and a second polycrystalline silicon layer which is thicker than the first. In the second polycrystalline silicon layer there is defined a structure having the desired circuit configuration. Using this polycrystalline silicon structure as a mask, the exposed parts of the intermediate oxide layer are etched until they are completely eliminated and, subsequently, an oxidation process is carried out long enough to completely convert the exposed parts of the first polycrystalline silicon layer into an oxide. Thus, from this layer is obtained a circuit structure which is self-aligned with the first structure defined in the second polycrystalline silicon layer.

REFERENCES:
patent: 4142926 (1979-03-01), Morgan
patent: 4190466 (1980-02-01), Bhattacharyya et al.
patent: 4234362 (1980-11-01), Riseman
patent: 4239559 (1980-12-01), Ito

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