Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with subsequent diverse...
Patent
1998-05-21
2000-08-08
Smith, Matthew
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with subsequent diverse...
438500, 438501, 438503, C30B 1512, H01L 2120, H01L 2136
Patent
active
061001678
ABSTRACT:
A process for removing copper from a boron doped, polished silicon wafer which contains copper on its polished surface and in its interior. In the process, the wafer is annealed at a temperature of at least about 75.degree. C. to increase the concentration of copper on the polished surface of the wafer and decrease the concentration of copper in the interior of the wafer. The polished surface of the annealed wafer is then cleaned to reduce the concentration of copper thereon. In addition, the annealing step is carried out at a temperature and a time such that the concentration of copper on the polished surface of the silicon will not increase by a factor of more than two upon storage of the annealed and cleaned wafer at room temperature for a period of 5 months.
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Bricchetti Marco
Corradi Alessandro
Falster Robert J.
Leoni Fabrizio
Lee Granvill
MEMC Electronic Materials , Inc.
Smith Matthew
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