Process for the production of an oriented monocrystalline silico

Details Process for the production of an oriented monocrystalline silico Process for the production of an oriented monocrystalline silico

1986-04-21

1988-09-27

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617R, 156620, 156643, 156644, 156646, 156647, 156653, 156657, 1566591, 156662, 427 86, 437228, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047739649

ABSTRACT:
This process consists of producing in the insulating support a periodic configuration which, in the form of regularly spaced parallel insulating strips, has overhanging and recessed parts, the width of the overhanging parts being smaller than that of the recessed parts; depositing on the complete structure obtained a silicon film; covering the silicon film with an encapsulating material layer; carrying out heat treatment in order to recrystallize the silicon film in monocrystalline form, said treatment consisting of locally melting the silicon film and displacing the melted zone parallel to the insulating strips, the melted zone being in the form of a line perpendicular to said strips, followed by the elimination of the encapsulating material layer.

REFERENCES:
patent: 4678538 (1987-07-01), Haond et al.
Journal of Applied Physics, vol. 55, No. 6, S. Kawamura et al, "Laser Recrystallization of Si Over SiO.sub.2 With a Heat-Sink Structure", pp. 1607-1609, Mar. 1984.
Patents Abstracts of Japan, vol. 9, No. 71 (C-272), 1794, 3/30/85; and JPA No. 59-203791 (Kogyo Gijutsuin), 11/17/84.

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