Process for the production of an integrated laser-photodetector

Details Process for the production of an integrated laser-photodetector Process for the production of an integrated laser-photodetector

1986-10-14

1987-09-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156648, 156652, 156655, 1566591, 156662, 357 16, 357 19, 357 30, 372 48, 372 50, 437129, 437 5, 437176, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046922075

ABSTRACT:
Process for producing an integrated laser-photodetector structure.
A buffer layer and a double heterostructure are deposited on a substrate. Part of the double heterostructure is etched to form a cleaved face and to free the buffer layer. On the latter is formed a photodetector, e.g. with the aid of a Schottky contact.
Application to the production of light sources for optical telecommunications.

REFERENCES:
patent: 4297653 (1981-10-01), Scifres et al.
patent: 4352116 (1982-09-01), Yariv et al.
IEEE Proceedings Section A-I, vol. 131, No. 5, Partie H, Oct. 1984, _pp. 299-303, Old Woking, Surrey, GB; H. Matsueda et al.: "An Optoelectronic Integrated Device", FIG. 3; pp. 299-300.
Patents Abstracts of Japan, vol. 8, No. 70, (E-235) [1507], Apr. 3, 1984; & JP-A-58 220 469, (Fujitsu K.K.), 22-12-1983, Resume.
Patents Abstracts of Japan, vol. 7, No. 272, (E-214) [1417], Dec. 3, 1983; & JP-A-58 154 286, (Fujitsu K.K.), 13-09-1986, Resume.
GaAs IC Symposium, Technical Digest, 1983, Phoenix, Ariz., 25-27 Oct. 1983, pp. 44-47, IEEE; M. E. Kim et al.: "GAAlAs/GaAs Integrated Optoelectronic Transmitter Using Selective MOCVD Epitaxy and Planar Ion Implantation", (FIG. 1; p. 45).
Applied Physics Letters, vol. 35, No. 1, Jul. 1979, pp. 16-18, American Institute of Physica; D. R. Scifres et al.: "Semiconductor Laser With Integral Light Intensity Detector", Resume; FIG. 1.
Electronics International, vol. 56, No. 18, Jun. 1983, pp. 89-90, New York, U.S.; C. Cohen: "Optoelectronic Chip Integrates Laser and Pair of FETs", En entier.
Applied Physics Letters, vol. 43, No. 4, Aug. 1983, pp. 345-347, New York, U.S.; O. Wada et al.: "Monolithic Integration of a Double Heterostructure Light-Emitting Diode and a Field-Effect Transistor Amplifier Using Molecular Beam Grown AlGaAs/GaAs", En entier.

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