Process for the production of an insulating support on an orient

Details Process for the production of an insulating support on an orient Process for the production of an insulating support on an orient

1986-04-21

1987-07-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156603, 156617R, 156620, 156644, 156646, 156647, 156653, 156657, 1566591, 156662, 427 86, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046785388

ABSTRACT:
Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support.
This process consists of covering a monocrystalline silicon support of orientation (100) with a SiO.sub.2 layer, producing in the latter a configuration having in the form of oriented (100) parallel insulating strips, an alternation of overhanging parts and recessed parts carrying out the etching of the SiO.sub.2 layer in order to locally form at the ends of said layer at least one opening, said etching being continued until the substrate is exposed, depositing on the etched SiO.sub.2 layer a silicon film, covering the silicon film with an encapsulating layer, carrying out a heat treatment of the structure obtained in order to recrystallize the silicon film in monocrystalline form with the same orientation as the substrate and eliminating the encapsulating layer.

REFERENCES:
patent: 4350561 (1982-09-01), Little
patent: 4536251 (1985-08-01), Chiang et al.
Applied Physics Letters, vol. 41, No. 1, Jul. 1982, pp. 64-67, American Institute of Physics, New York, U.S.; J. Sakurai et al.: "Laser-Induced Lateral Expitaxial Growth of Silicon Over Dioxide with Locally Varied Encapsulation"-p. 65, FIGS. 1,2.
Journal of Applied Physics, vol. 55, No. 6, Mar. 15, 1984, pp. 1607-1609, American Institute of Physics, New York, U.S.; S. Kawamura et al.: "Laser Recrystallization of Si Over SiO.sub.2 with a Heat-Sink Structure"-p. 1607, FIG. 2.

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