Process for the preparation of mono-crystalline 3-5 semi-insulat

Details Process for the preparation of mono-crystalline 3-5 semi-insulat Process for the preparation of mono-crystalline 3-5 semi-insulat

1987-04-08

1989-08-01

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156607, 1566161, 1566162, 1566171, 1566262, 156DIG70, 156DIG75, 156DIG81, 156DIG82, 437115, C30B 1504

Patent

active

048530778

ABSTRACT:
The present invention relates to a process for the preparation of mono-crystalline 3-5 semi-insulating materails by doping, characterized in that the starting charge of type .rho. is doped with at least one deep donor due to a transition element. It relates also to the use of the semi-insulating materials obtained in the fields of optoelectronics and of rapid electronics.

REFERENCES:
patent: 3344071 (1967-09-01), Cronin
patent: 3585087 (1971-06-01), Blum et al.
patent: 4158851 (1979-06-01), Akai et al.
patent: 4299650 (1981-11-01), Bonner
Bachman et al., Liquid Encapsulated Czochralski Pulling of InP Crystals, Journal of Electronic Materials, vol. 4, No. 2, Apr. 1975, pp. 389-406.

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