Process for the manufacture of an integrated voltage limiter and

Static information storage and retrieval – Systems using particular element – Semiconductive

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36518533, G11C 1300

Patent

active

056005903

ABSTRACT:
A process for the manufacture of an integrated voltage limiter and stabilizer component in a flash EEPROM memory device comprises a step of formation of an N type lightly doped well on a single-crystal silicon substrate; a step of formation of an active area on the surface of said N type well; a step of growth of a thin gate oxide layer over said active area; a step of implantation of a first heavy dose of N type dopant into said N type well to obtain an N type region; a step of implantation of a second heavy dose, higher than said first heavy dose, of N type dopant into said N type region to obtain an N+contact region to both the N type well and said N type region; a step of implantation of a third heavy dose, higher than said first heavy dose, of P type dopant into said N type region to form a P+ region.

REFERENCES:
patent: 4473941 (1984-10-01), Turi et al.
patent: 4694428 (1987-09-01), Matsumura et al.
patent: 5103425 (1992-04-01), Kuo et al.
patent: 5170232 (1992-12-01), Narita
patent: 5322803 (1994-06-01), Cappeletti et al.

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