Process for the hydrophilizing and/or cement-residue-removing su

Details Process for the hydrophilizing and/or cement-residue-removing su Process for the hydrophilizing and/or cement-residue-removing su

1988-10-05

1991-09-17

McFarlane, Anthony

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 15, 134 28, 134 29, 134 42, B08B 304

Patent

active

050492004

ABSTRACT:
Silicon wafers can be provided with a hydrophilic surface and/or freed of hering cement residues originating from the polishing operation with the aid of solutions adjusted to a pH of 8 to 14 with the aid of alkali-metal or alkaline-earth-metal compounds and containing hydrogen peroxide. These processes can even be carried out at room temperature and are remarkable for their low chemical consumption and easy manageability.

REFERENCES:
patent: 4430152 (1984-02-01), Okano
patent: 4545918 (1985-10-01), Pralus
patent: 4695327 (1987-09-01), Grebinski
patent: 4855023 (1989-08-01), Clark et al.
patent: 4857225 (1989-08-01), Terada et al.
Modern Silicon Technology, pp. 202-203, Hans Herrmann et al. (1975).

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