Process for the formation of single crystals from the gas phase

Details Process for the formation of single crystals from the gas phase Process for the formation of single crystals from the gas phase

1985-11-22

1987-09-22

Richman, Barry S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156DIG82, C30B 2306

Patent

active

046953477

ABSTRACT:
A process and arrangement for the formation of single crystals from the gas phase, in which the single crystal which is located in the gas phase, and which is in the process of growth originating from only one adhering surface, is subjected to a static temperature gradient between the exposed crystal surface and the surroundings about the crystal. When the crystal which is in the process of growth, within the metastable range of supersaturation is warmer than its surroundings, than homogeneous crystals of larger dimension can be formed. During the formation of HgI.sub.2 (.alpha.) crystals, the crystal is irradiated for purposes of observation with only orange-colored light during the growth process.

REFERENCES:
patent: 3235418 (1966-02-01), Nickl et al.
patent: 3502516 (1970-03-01), Henker
patent: 4332833 (1982-06-01), Aspnes et al.
patent: 4434025 (1984-02-01), Robillard
patent: 4439267 (1984-03-01), Jackson
Scholtz et al.; Temperature-Gradient Reversal Methods for Crystal Growth; S. Peiser, Pergamon, Oxford (1967), pp. 475-482.
Omaly et al; Study of the Crystalline Growth of HgI.sub.2 (.alpha.) Using the Vapour Phase and in a Sealed Tube; Mat. Res. Bull., vol. 16, pp. 1261-1270, 1981.
Scholz; On Crystallization by Temperature-Gradient Reversal ACTA Electronica, 17, 1, pp. 69-73 (1974).

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