Process for the formation of a metal pattern

Details Process for the formation of a metal pattern Process for the formation of a metal pattern

1995-11-09

1997-09-23

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

4302721, 4302751, 430512, 430524, 430525, 430526, 430950, G03F 738

Patent

active

056702973

ABSTRACT:
A process for formation of a metal pattern comprising the steps of forming a silicide metal film on an underlying substrate, forming an anti-reflection film on the underlying substrate on which the silicide metal film is formed, forming a resist film on the anti-reflection film, patterning the resist film by photolithography to form a predetermined pattern, and using the thus patterned resist film as a mask and etching the silicide metal film on the underlying substrate, wherein the optical constants and the thickness of the anti-reflection film are determined to give the smallest standing wave effect at the time of photolithography in accordance with the type of the silicide metal film.

REFERENCES:
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patent: 5077185 (1991-12-01), Cho et al.
patent: 5194712 (1993-03-01), Jones
patent: 5362598 (1994-11-01), Takeyama et al.
patent: 5468606 (1995-11-01), Bogart et al.
patent: 5472827 (1995-12-01), Ogawa et al.
patent: 5472829 (1995-12-01), Ogawa

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