Process for the formation of a functional deposited film by way

Coating processes – Measuring – testing – or indicating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 39, 427 451, 427346, B05D 306

Patent

active

048972819

ABSTRACT:
According to the present invention, there is provided an improved process for the formation of a deposited film by way of a microwave plasma CVD method, the improvement comprising monitoring an effective power of a microwave to be introduced into a reaction chamber, leading to a control means an output signal indicative of the effective power corresponding a plasma intensity, and automatically controlling the matching between the reaction chamber and the microwave to be introduced into the reaction chamber according to an output signal from the control means. According to the above process, even after a long discharge time has elapsed, the plasma intensity in the reaction chamber may be maintained constant, and the effective power of the microwave to be introduced into the reaction chamber may be therefore maintained constant. Because of this, it becomes possible to repeatedly and stably prepare a desired deposited film excelling in the uniformity of the thickness and that of the quality at a high deposition rate.

REFERENCES:
patent: 4619729 (1986-10-01), Johncock et al.
patent: 4637938 (1987-01-01), Lee et al.
patent: 4667076 (1987-05-01), Amada

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for the formation of a functional deposited film by way does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the formation of a functional deposited film by way , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the formation of a functional deposited film by way will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1922875

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.