Process for the exposure of semiconductor wafer

Details Process for the exposure of semiconductor wafer Process for the exposure of semiconductor wafer

1986-05-30

1987-11-03

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

313571, 313639, 313642, G03C 500, H01J 6116, H01J 6120

Patent

active

047043466

ABSTRACT:
A semiconductor wafer can be exposed by arranging a combination of electrodes in an opposed relation with an interelectrode distance of not more than 15 mm in a closed discharge cavity, enclosing, within the cavity, mercury as a light-emitting discharge component in an amount such that the vapor pressure of mercury reaches 0.4-5 atms during discharge lighting, forming a discharge between the combination of electrodes while controlling the discharge current at not less than 10 A, and irradiating light, which has been radiated as a result of the discharge and contains at least one of light components having wave-lengths of 405 nm and 436 nm respectively, onto the surface of a photoresist applied on the semiconductor wafer through a photomask or reticle and a lens which permits transmission of the light having wavelength of 405 nm or 436 nm therethrough.

REFERENCES:
patent: 2707247 (1955-04-01), Anderson, Jr.
patent: 2821647 (1958-01-01), Rigden
patent: 4215935 (1980-08-01), Loebach
patent: 4606997 (1986-08-01), Kira
Elenbaas et al, High Pressure Mercury Vapor Lamps and Their Applications, N. V. Philips, The Netherlands, 1965.
"Introduction to Microlithography", edited by Thompson et al, pp. 20-27, 1983.

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