Process for the determination of the boron contents of pure halo

Details Process for the determination of the boron contents of pure halo Process for the determination of the boron contents of pure halo

1976-11-01

1977-08-16

Reese, Robert M.

Chemistry: physical processes

Physical processes

Crystallization

23253PC, G01N 3112

Patent

active

040423310

ABSTRACT:
Process for the determination of the boron content of pure halogensilanes pecially silicon tetrachloride and trichlorosilane, which contain up to 0.1% of atoms of acceptors and donors, which comprises the steps of converting the halogen silanes into the gaseous state in a testing apparatus by contacting said halogensilanes with an evaporator surface heated to a temperature ranging from 80.degree. C to 350.degree. C, passing the generated gases to a support heated to the decomposition temperature of the gases whereby the released silicon is deposited on the support, removing the support and the deposit thereon from the testing apparatus and determining the boron content by calculation from the measured value of the specific resistance of the support plus the deposited silicon. It should be understood that all parts of the testing apparatus which come into contact with the generated gas, with the exception of the support heated to the required deposition temperature, should be at the temperature above 80.degree. C, but below the decomposition temperature of the halogensilane.

REFERENCES:
patent: 3403003 (1968-09-01), Morgenthaler
patent: 3540861 (1970-11-01), Bradley et al.

Affiliated with

Also associated with

Rating

Process for the determination of the boron contents of pure halo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the determination of the boron contents of pure halo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the determination of the boron contents of pure halo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-358332