Process for the deposition of pure semiconductor material

Details Process for the deposition of pure semiconductor material Process for the deposition of pure semiconductor material

1979-01-12

1979-12-18

Kaplan, Morris

Coating processes

Electrical product produced

Welding electrode

427 86, 427314, B05D 512

Patent

active

041795300

ABSTRACT:
In a device and process for the deposition of pure semiconductor materials, specially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperatures, wherein the device consists of a metallic base plate, mounting means and electrical connections thereon for heating the carrier bodies, as well as pipe connections for supply and exhaust of said gaseous compounds, and a bell-shaped cover slipped onto the base plate and forming a gas-tight seal therewith, the improvement that the area of the bell-shaped cover facing the reaction space consists of silver or silverplated steel. A removable heating element is used to preheat the carrier bodies and a cylinder disposed about the bell forms therewith a closed annular cooling chamber.

REFERENCES:
patent: 3152933 (1964-10-01), Reuschel
patent: 3240623 (1966-03-01), Heim
patent: 3330251 (1967-07-01), Gutsche
patent: 3524426 (1970-08-01), Ogle, Jr.
patent: 3717439 (1973-02-01), Sakai
patent: 3748169 (1973-07-01), Keller
patent: 3804059 (1974-04-01), Streel
patent: 3895602 (1975-07-01), Bobenrieth
patent: 3918396 (1975-11-01), Dietze et al.
patent: 3962670 (1976-06-01), Dietze
patent: 4000335 (1976-12-01), Stahl

Affiliated with

Also associated with

Rating

Process for the deposition of pure semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the deposition of pure semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the deposition of pure semiconductor material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-453772