Process for the deposition of polycrystalline silicon from the g

Details Process for the deposition of polycrystalline silicon from the g Process for the deposition of polycrystalline silicon from the g

1976-09-22

1979-07-10

White, Robert F.

Plastic and nonmetallic article shaping or treating: processes

Gas or vapor deposition of article forming material onto...

264173, 264219, 264221, 264313, B29C 1300, B29C 102

Patent

active

041607970

ABSTRACT:
A process for deposition of polycrystalline silicon from the gas phase on ated carrier bodies of carbon, which comprises assembling the carrier bodies from extremely thin flexible graphite foils, heating the bodies to deposition temperature, while contacting them with a gaseous mixture containing a decomposable silicon compound and, if desired, hydrogen, and separating the deposited silicon from the carrier body, after termination of the deposition process, by mechanical means. The polycrystalline silicon can either be deposited in the form of shaped hollow bodies for use as laboratory equipment or in the semiconductor industries, or it may be processed to monocrystalline materials.

REFERENCES:
patent: 2960425 (1960-11-01), Shermon
patent: 3751539 (1973-08-01), Reuschet et al.
patent: 3867497 (1975-02-01), Teich et al.
patent: 3943218 (1976-03-01), Pietze et al.
patent: 4065533 (1977-12-01), Koppl et al.

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