Process for the controlled etching of tapered vias in borosilica

Details Process for the controlled etching of tapered vias in borosilica Process for the controlled etching of tapered vias in borosilica

1983-08-08

1984-03-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156653, 156657, 1566591, 156663, 357 71, 427 89, 430316, 430317, B44C 122, C03C 1500, C03C 2506

Patent

active

044392702

ABSTRACT:
A process is disclosed for etching openings in a relatively thick layer of borosilicate glass while controlling the degree of taper of the sidewalls of the opening, the taper being in excess of about 45.degree.. The process involves (1) depositing a layer of silicon nitride that contains silicon in an amount in excess of stoichoimetric in Si.sub.3 N.sub.4, (2) densifying the silicon nitride layer, (3) depositing a layer of resist, (4) exposing and developing the layer of resist to define a desired pattern of openings in the borosilicate glass layer, (5) removing the exposed silicon nitride areas, and (6) subjecting the resultant exposed borosilicate glass surface to an etchant for the glass.

REFERENCES:
patent: 3447984 (1969-06-01), Castrucci et al.
patent: 3483108 (1969-12-01), Schaefer

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