Process for the autopositioning of a local field oxide with resp

Details Process for the autopositioning of a local field oxide with resp Process for the autopositioning of a local field oxide with resp

1985-06-13

1987-01-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148DIG50, 29576W, 29580, 156646, 156648, 156651, 156653, 156657, 1566611, 156662, 357 47, 357 59, 427 93, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046362819

ABSTRACT:
Process for the autopositioning of a local field oxide relative to an insulating trench.
This process consists of forming at least one first insulating coating on a silicon substrate, producing a second insulating coating on the first coating, anisotropically etching the first and second coating until the region of the substrate in which the trench is to be formed is exposed, forming insulating spacers on the etched flanks of the first and second coatings, anisotropically etching the substrate region in order to form the trench, the second etched coating and the spacers used as a mask for said etching, eliminating the mask, forming the insulating edges in the trench, filling said trench with a material and forming the field oxide.

REFERENCES:
patent: 4472240 (1984-09-01), Kameyama
patent: 4477310 (1984-10-01), Park et al.
patent: 4534824 (1985-08-01), Chen
IBM Technical Disclosure Bulletin, vol. 24, Nos. 7B, 7A, Dec. 1981, vol. 20, No. 1, Jun. 1977.

Affiliated with

Also associated with

Rating

Process for the autopositioning of a local field oxide with resp does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the autopositioning of a local field oxide with resp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the autopositioning of a local field oxide with resp will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2354267