Process for the anisotropic etching of a III-V material and appl

Details Process for the anisotropic etching of a III-V material and appl Process for the anisotropic etching of a III-V material and appl

1990-08-17

1991-12-24

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, 437228, H01L 2100

Patent

active

050749552

ABSTRACT:
Process for the anisotropic etching of a III-V material and application to surface treatment for epitaxial growth.
This process includes the step of etching a III-V material (2) by reactive ionic etching using a gaseous mixture containing by volume 20 to 30% of at least one gaseous hydrocarbon, 30 to 50% of at least one inert gas and 20 to 50% of hydrogen.
Said etching can be performed locally with the aid of a Si.sub.3 N.sub.4 etching mask (4a).

REFERENCES:
Niggebrugge et al., "A Novel Process for Reactive Ion Etching on InP, Using CH.sub.4 /H.sub.2 "; Process Technologies, 1986, pp. 367-372.

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