Process for surface passivation of an indium phosphide substrate

Details Process for surface passivation of an indium phosphide substrate Process for surface passivation of an indium phosphide substrate

1987-12-28

1989-09-12

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

437244, 437946, 437980, 357 232, H01L 21288, H01L 21314, H01L 2920

Patent

active

048656569

DESCRIPTION:

BRIEF SUMMARY
TECHNICAL FIELD

The present invention relates to the technical domain of the manufacture of electronic and optoelectronic components, such as diodes, MIS (metal-insulator-semiconductor) components and it encompasses the manufacture of such components based on indium phosphide as a semiconductor.
Electronic components of such a type have already been produced and used more or less successfully. In fact, it has been ascertained that the operation of such components is largely dependent on the properties of the surface and interface between the semiconductor layer and the insulating layer. This seems connected with the process for obtaining an indium phosphide substrate, initially employing a mechanical cut-out or the like from a monocrystalline bar, then polishing the face intended to be coated with the insulating layer, with the physico-chemical characteristics of the indium phosphide and with the process for obtaining the insulating layer.
Such plates present, surface defects resulting from chemical or structural defects which behave like electron donor or acceptor traps opposing or disturbing the operation of an electronic structure.
In order to remedy this drawback, it comes to mind to compensate the surface defects of the semiconductor substrate.
In order to compensate for such defects though, it is not apparent to deposit on the surface a phosphorus or indium oxide, as a large number thereof exist which are all volatile or unstable and are therefore also generators of surface defects which are precisely sought to be compensated.


PRIOR ART

In an attempt to bring a solution to this problem, the prior art has proposed different methods of treatment.
One of them, disclosed by the Journal APPLIED PHYSICS LETTERS, Vol. 46 No. 4, pages 416 to 418 (15.2.85), consists of growing on the surface to be treated of an indium phosphide substrate an insulating layer composed of a phosphorus oxynitride intended to compensate the surface defects, itself coated with a second insulating layer (silica) complicating manufacture and giving the components properties of instability.
Furthermore, in order to cure the defects, the oxynitride must be of well defined composition, which is difficult to reproduce for a body like phosphorus oxynitride of which the content of phosphorus; nitrogen and oxygen is eminently variable.
A second known method, disclosed by the Journal IEEE, TRANSACTIONS ON ELECTRON DEVICES, Vol. ED 31 No. 8, pages 1038 to 1043 (1984), consists of an anodic oxidation of a predeposited layer of aluminium, the anodic oxidation being extended so that a phosphorus-rich oxide is constituted at the InP-alumina interface. Such a technique leads to a double-layer dielectric capable of provoking drifts of the operational characteristics of a component made from this technique, all the more so as the phosphorus oxide is unstable. Furthermore, such a method cannot be easily implemented for the manufacture of diodes.
A third method, recommended by the Journal JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 23 No. 8, pages 1157 and 1158 (1984), consists in depositing a phosphorus oxynitride which constitutes the whole gate insulator. A difficulty of reproducibility of the composition of this oxynitride and the difficulty of engraving it chemically constitute the major disadvantages of this method.
A fourth method, taught by the publication ELECTRONICS LETTERS, Vol. 19, No. 13, pages 459 to 461 (1983), consists in placing the indium phosphide substrate in a sealed bulb containing sulfur. The bulb is heated in order to produce, by sulfuration, an insulating layer which decomposes, provoking a loss of phosphorus and which necessitates being coated with a second insulating layer in order to limit the leakage currents. The components obtained are unstable.
A fifth method, due to the works of the inventors published in the Journal APPLIED PHYSICS LETTERS, Vol. 46, No. 8, pages 761 to 763 (1985), consists in placing the indium phosphide substrate in an enclosure under ultrahigh vacuum with the presence of arsenic under partial pres

REFERENCES:
Sacilotti et al., Stabilization of InP Substrate Under Annealing in the Presence of GaAs, 320 (1986), Applied Physics Letters 48.
Blanchet et al., Reduction of Fast Interface States and Suppression of Drift Phoenomena in Arsenic-Stabilized Metal-Insulator-InP Structures, 320 (1985) Applied Physics Letters 46.

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