Process for supplying ozone (O.sub.3) to TEOS-O.sub.3 oxidizing

Details Process for supplying ozone (O.sub.3) to TEOS-O.sub.3 oxidizing Process for supplying ozone (O.sub.3) to TEOS-O.sub.3 oxidizing

1996-12-27

1999-04-06

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438787, H01L 2131, H01L 21469

Patent

active

058918108

ABSTRACT:
A method and apparatus for controlling the amount of ozone concentration in the layers of a film depositing system and the multi-layered structure produced thereby, whereby the concentration of ozone in each layer gradually changes from a low ozone concentration in the first deposited layer to a high ozone concentration in the last deposited layer.

REFERENCES:
patent: 5288518 (1994-02-01), Homma
patent: 5632868 (1997-05-01), Harada et al.

Affiliated with

Also associated with

Rating

Process for supplying ozone (O.sub.3) to TEOS-O.sub.3 oxidizing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for supplying ozone (O.sub.3) to TEOS-O.sub.3 oxidizing , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for supplying ozone (O.sub.3) to TEOS-O.sub.3 oxidizing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1371259