Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1997-08-18
1998-05-05
Gorgos, Kathryn L.
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
216 69, C23F 100
Patent
active
057469296
ABSTRACT:
A process for structuring polymer films, such as printed circuit boards and film boards, uses a plasma, which is formed in a container by the excitation of gas mixtures by microwaves, in which there is a control of the surface temperature of the polymer films during structuring by the plasma. By adjusting the parameters it is possible to operate just below a material-damaging temperature limit for polymer films, so that structures or microshapes are carefully plasma-eroded in polymer films. At high surface temperatures and with a dense plasma, structures or microshapes are rapidly eroded by the plasma, in which the structures or microshapes are homogeneously plasma-eroded with a uniform distribution of the surface temperature and gas flow. The surface temperature is maintained below the material-damaging temperature by controlling the power density of the microwave energy, the level of energy provided to a heater in the container, and the pressure of gas in the container in accordance with a time pattern algorithm using a computer.
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Schmid Hermann
Schmidt Walter
Dyconex Patente AG
Farley Walter C.
Gorgos Kathryn L.
Leader William T.
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