Process for structuring at least one year as well as...

Details Process for structuring at least one year as well as... Process for structuring at least one year as well as...

2005-04-21

2010-06-22

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S739000, C257S416000, C257S798000, C257SE29001, C257SE21486, C257SE21590

Reexamination Certificate

active

07741227

ABSTRACT:
A process for structuring at least one layer as well as an electrical component with structures from the layer are described.The invention states a process to generate at least one structured layer (10A), wherein a mask structure (20) with a first (20A) and second structure (20B) is generated on a layer (10) which is present on a substrate (5). Through this mask structure (20), the first layer (20A) is transferred onto the layer (10) using isotropic structuring processes, and the second structure (20B) is transferred onto the layer (10) using anisotropic structuring processes. The process as per the invention permits the generation of two structures (20A,20B) in at least a single layer while using a single mask structure.

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International Preliminary Report on Patentability and Written Opinion of the International Search Authority, International Application Serial No. PCT/DE2005/000736, Nov. 1, 2006, 7 pp.
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