Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1996-02-28
1999-11-30
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438439, 438297, 438756, H01L 2176
Patent
active
059942037
ABSTRACT:
A new polysilicon-buffered field isolation process provides reduced stress during field oxidation and reduced bird's beak. Prior to forming the LOCOS masking stack conventionally used for field isolation, a polysilicon buffer layer is first formed on the semiconductor wafer. The polysilicon buffer layer relieves stress between the masking stack and semiconductor wafer similar to conventional Poly-buffered LOCOS processes, but additionally provides sacrificial silicon into which the bird's beak region extends. Subsequent deprocessing of mask and buffer layers removes a significant portion of the bird's beak region, thereby providing active areas having improved physical and electrical characteristics.
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Dang Trung
Micro)n Technology, Inc.
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