Process for separating dies on a wafer

Details Process for separating dies on a wafer Process for separating dies on a wafer

2005-02-01

2005-02-01

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S462000, C438S464000, C438S465000

Reexamination Certificate

active

06849523

ABSTRACT:
A process for separating IC dies from a wafer substrate. In one embodiment, complete separation channels are initially cut through the wafer between dies along one axis. Next, partial separation channels are cut into the wafer along an intersecting axis, leaving wafer material connecting adjacent dies. In another embodiment, partial separation channels are cut into the wafer along one axis, after which complete separation channels are cut through the wafer along the intersecting axis. In still another embodiment, partial separation channels are cut along both axes.

REFERENCES:
patent: 3040489 (1962-06-01), Da Costa

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