Process for semiconductor device etch damage reduction using hyd

Details Process for semiconductor device etch damage reduction using hyd Process for semiconductor device etch damage reduction using hyd

1993-10-15

1995-06-20

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437247, 437937, 148DIG3, C23F 100, H01L 21306

Patent

active

054258430

ABSTRACT:
A multi-layer structure, typically semiconductor device, is etched according to a process of the present invention, and meets the above-described existing needs by focusing on the post-etch treatment of the damaged, etched semiconductor device formed thereby. This post-etch treatment is accomplished by exposing the damaged silicon to a forming-gas downstream plasma which results in substantially increased oxide regrowth and significantly higher level of gate oxide quality. In conducting the process of the subject invention from about 1% up to about 15% by volume of H.sub.2, and from about 85 up to about 99% by volume of N.sub.2 are preferably employed as the post etching forming-gas plasma.

REFERENCES:
patent: 4331486 (1982-05-01), Chenovas-Paule et al.
patent: 4897154 (1990-01-01), Chakravarti et al.
patent: 5089441 (1992-02-01), Moslehi
S. J. Fonash et al., J. Appl. Phys. 58 (2), 15 Jul. 1985, pp. 862-866.
S. J. Fonash, Solid State Tech. 28 (5) 1-11 (1985).

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