Process for selectively forming refractory metal silicide layers

Details Process for selectively forming refractory metal silicide layers Process for selectively forming refractory metal silicide layers

1980-06-30

1981-08-25

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29580, 29590, 156657, 156662, 357 67, 427 93, 427399, H01L 2124, H01L 21306

Patent

active

042857619

ABSTRACT:
A method of forming a refractory metal silicide pattern on a substrate by (1) forming a blanket layer of SiO.sub.2 on the substrate, (2) depositing a blanket layer of polycrystalline Si over the SiO.sub.2 layer, (3) defining a pattern in the blanket Si layer thereby exposing selected areas of the SiO.sub.2 layer, (4) depositing a blanket layer of refractory metal silicide on the substrate over the SiO.sub.2 and Si layers, (5) heating the substrate in an oxidizing environment to a temperature sufficient to oxidize the metal silicide layer over the Si to form an upper layer of SiO.sub.2 and to convert the metal silicide layer overlying the SiO.sub.2 layer to a metal rich SiO.sub.2 layer, and
exposing the oxidized surface to an etchant that selectively etches away the metal rich SiO.sub.2 layer.

REFERENCES:
patent: 3980507 (1976-09-01), Carley
patent: 4090915 (1978-05-01), Keller
patent: 4128670 (1978-12-01), Gaenssien
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4228212 (1980-10-01), Brown et al.
Zirinsky et al., "Oxulation . . . Films", Applied Physics Letters, vol. 33, No. 1, (Jul. 1978), pp. 76-78.
Ho et al., "Self-Aligned . . . Contact", IBM Technical Disclosure Bulletin, vol. 22, No. 12, (May, 1980), pp. 5336-5338.

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